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| BU603 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in power supplies and deflection circuits
for color receivers and monitors
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage-VBE= 0
1350
V
VCEO Collector-Emitter Voltage
550
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IBB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
IE
Emitter Current-Continuous
7
A
IEM
Emitter Current-Peak
Collector Power Dissipation
PC
TC=25â
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
12
A
100
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.25 â/W
isc Product Specification
BU603
isc Websiteï¼www.iscsemi.cn
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