BU522B Datasheet, PDF (1/2 Pages) Motorola, Inc – 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS

INCHANGE Semiconductor
isc Silicon Darlington NPN Power Transistor
isc Product Specification
BU522B
DESCRIPTION
·High Voltage
·Low Collector Saturation Voltage-
: V_CE(sat)= 2.0V @ I_C= 4A
APPLICATIONS
·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CER(SUS) Collector-Emitter Voltage
425
V
V_CER
Collector-Emitter Voltage
450
V
V_CBO
Collector-Base Voltage
475
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
7
A
I_BB
Base Current
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
2
A
75
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.67 ℃/W
isc Website：www.iscsemi.cn