BU508AW Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508AW
DESCRIPTION
With TO-247 package
High voltage
High speed switching
APPLICATIONS
For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
I_C
Collector current (DC)
I_CM
Collector current -peak
I_B
Base current (DC)
I_BM
Base current -peak
P_tot
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
T_C=25
VALUE
1500
700
8
15
4
6
125
150
-65~150
UNIT
V
V
A
A
A
A
W