BU506DF Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU506DF
DESCRIPTION
With TO-220Fa package
High voltage
High-speed switching
With integrated efficiency diode
APPLICATIONS
Horizontal deflection circuits of colour
TV receivers.
Line-operated switch-mode applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current (Pulse)
I_B
Base current
I_BM
Base current(peak)
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1500
700
6
5
8
3
5
20
150
-65-150
UNIT
V
V
V
A
A
A
A
W