BU505 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU505
DESCRIPTION
With TO-220C package
High voltage,high speed-switching
APPLICATIONS
For horizontal deflection circuits
of color TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current (peak)
I_B
Base current
I_BM
Base current(peak)
P_tot
Total power dissipation
T_j
Max.operating junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
VALUE
1500
700
5
2.5
4
1
2
75
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.67
UNIT
/W