BU4508DX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU4508DX
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
6
A
45
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 2.8 ℃/W
isc website：www.iscsemi.cn
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