BU415B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU415B
DESCRIPTION
·Collector-Emitter Sustaining Voltag-
: V_CEO(SUS)= 400V(Min)
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal output and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
900
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
12
A
I_CM
Collector Current-Peak Repetitive
15
A
Collector Power Dissipation
P_C
@ T_C=25℃
120
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature Range
-65~200
℃
isc Website：www.iscsemi.cn