BU408D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU408D
DESCRIPTION
·High Voltage: V_CEV= 400V(Min)
·Fast Switching Speed-
: t_f= 0.5μs(Max)
·Low Saturation Voltage-
: V_CE(sat)= 1.0V(Max)@ I_C= 6A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
400
V
V_CEV
Collector-Emitter Voltage
400
V
V_CEO
Collector-Emitter Voltage
200
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
60
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.08 ℃/W
isc Website：www.iscsemi.cn