BU323 Datasheet, PDF (1/2 Pages) GE Solid State – 10-Ampere N-P-N Monolithic Darlington Power Transistors

INCHANGE Semiconductor
isc Silicon Darlington NPN Power Transistor
isc Product Specification
BU323
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 350V(Min.)
·High Reliability
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO Collector-Emitter Voltage
350
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current- Continuous
10
A
I_CM
Collector Current-Peak
16
A
I_BB
Base Current
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
3
A
175
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
1.0 ℃/W
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