BU306F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU306F/307F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 300V(Min)- BD306F
400V(Min)- BD307F
·Collector Current-8A
APPLICATIONS
·Designed for use in switching regulators, inverters, motor
controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BU306F
600
V_CBO
Collector-Base Voltage
V
BU307F
700
BU306F
300
V_CEO
Collector-Emitter Voltage
V
BU307F
400
V_EBO
Emitter-Base Voltage
9
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
16
A
I_BB
Base Current
4
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
20
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
6.12 ℃/W
isc Website：www.iscsemi.cn