BU2727DF Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2727DF
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current -peak
I_B
Base current (DC)
I_BM
Base current -peak
P_tot
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
1700
825
7.5
12
30
12
25
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃