BU2527DF Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2527DF
DESCRIPTION
With TO-3PFa package
High voltage
High speed switching
Built-in damper diode
APPLICATIONS
For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current -peak
I_B
Base current (DC)
I_BM
Base current -peak
P_tot
Total power dissipation
T_C=25
T_j
Max.operating junction temperature
T_stg
Storage temperature
VALUE
1500
800
7.5
12
30
8
12
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W