BU2527AW Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
12
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
BU2527AW
isc website：www.iscsemi.cn
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