BU2515DX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2515DX
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 800V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
PC monitors.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector- Emitter Voltage(V_BE= 0)
1500
V
V_CEO
Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7.5
V
I_C
Collector Current- Continuous
9
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current- Continuous
5
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
7.5
A
45
W
150
℃
T_stg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
2.8
℃/W
isc Website：www.iscsemi.cn