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| BU180 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU180
DESCRIPTION
·Collector Current -IC= 10A
·DC Current Gain-
: hFE= 200(Min)@ IC= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for line operated switchmode applications
such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
320
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
50
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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