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| BU1706AX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Designed for use in high frequency electronic lighting
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector-Emitter Voltage
VBE= 0
1750
V
VCEO Collector-Emitter Voltage
750
V
VEBO Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IBB
Base Current-Continuous
3
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
5
A
32
W
150
â
Tstg
Storage Temperature Range
-40~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 4.0 â/W
isc Product Specification
BU1706AX
isc Websiteï¼www.iscsemi.cn
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