BU1508DX Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1508DX
DESCRIPTION
With TO-220F package
High voltage
High speed switching
Built-in damper diode.
APPLICATIONS
For use in horizontal def lection circuits of
colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current (peak)
I_B
Base current
I_BM
Base current (peak)
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1500
700
7.5
8
15
4
6
35
150
-65~150
UNIT
V
V
V
A
A
A
A
W