BU1508DF Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1508DF
DESCRIPTION
·With TO-220Fa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current (peak)
I_B
Base current
I_BM
Base current (peak)
P_T
Total power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
1500
700
7.5
8
15
4
6
35
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃