BU1508AX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU1508AX
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 700V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Base Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
700
V
VEBO Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
6
A
35
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 3.6 ℃/W
isc website：www.iscsemi.cn
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