BU1507DX Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU1507DX
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 700V(Min.)
·High Speed Switching
·Built-in Damper Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of color
TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CESM Collector-Emitter Voltage V_BE= 0
1500
V
V_CEO Collector-Emitter Voltage
700
V
V_EBO Emitter-Base Voltage
7.5
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
35
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 3.7 ℃/W
isc Website：www.iscsemi.cn