BU1506DX Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU1506DX
DESCRIPTION
With TO-220F package
High voltage
High speed switching
Built-in damper diode.
APPLICATIONS
For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
I_BM
Base current-peak
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
1500
700
7.5
5
8
3
8
32
150
-40~150
UNIT
V
V
V
A
A
A
A
W