BU134 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU134
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 350V(Min.)
·Collector Saturation Voltage-
: V_CE(sat)= 1.0V(Max.)@ I_C= 3A
·High Speed Switching
APPLICATIONS
·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
500
V
V_CEO
Collector-Emitter Voltage
350
V
V_EBO
Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
4
A
I_CM
Collector Current-Peak
7
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
A
85
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
2.0 ℃/W
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