BU126 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,300V,30A)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU126
DESCRIPTION
With TO-3 package
High breakdown voltage
APPLICATIONS
For voltage regulator ,inverter,switching
mode power supply applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
750
300
3.0
6.0
2.0
40
125
-65~125
UNIT
V
V
A
A
A
W
MAX
2.5
UNIT
K/W