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| BU113 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU113
DESCRIPTION
·Collector-Emitter Voltage-
:VCEX(SUS) = 700V(Min.)
·Collector Current- IC= 10A
APPLICATIONS
·Designed for use in horizontal deflection output state of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Emitter Voltage
700
V
VCEX
Collector-Emitter Voltage VBE= -5V
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC= 90â
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
30
W
150
â
-65~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.0 â/W
isc Websiteï¼www.iscsemi.cn
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