BU112 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU112
DESCRIPTION
·Collector-Emitter Voltage-
:V_CEX(SUS) = 550V(Min.)
·Collector Current- I_C= 10A
APPLICATIONS
·Designed for deflection circuits applications in color TV
receivers fitted with 90℃ kinescope.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Emitter Voltage
550
V
V_CEX
Collector-Emitter Voltage V_BE= -5V
550
V
V_EBO
Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
60
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
2.9 ℃/W
isc Website：www.iscsemi.cn