BU109 Datasheet, PDF (1/2 Pages) Continental Device India Limited – NPN HIGH VOLTAGE SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: V_CE(sat)= 1.0 V(Max)@ I_C = 5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 150 V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
330
V
V_CEV
Collector-Emitter Voltage- V_BE= -1.5V
330
V
V_CEO
Collector-Emitter Voltage
150
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
7
A
I_CM
Collector Current-Peak(Repetitive)
10
A
I_CM
Collector Current-Peak(t= 10ms)
15
A
I_BB
Base Current
4
A
P_C
Collector Power Dissipation@T_C=25℃
60
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
2.08 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
isc Product Specification
BU109
isc Website：www.iscsemi.cn