BU108 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU108
DESCRIPTION
·High Voltage
·High Switching Speed
·Collector Current- I_C = 5A
APPLICATIONS
·Designed for high voltage CRT scanning applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO Collector-Emitter Voltage
750
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
5
A
I_BB
Base Current-Continuous
3.5
A
I_E
Emitter Current-Continuous
P_C
Collector Power Dissipation
@V_CE≤100V,T_C≤95℃
T_J
Junction Temperature
T_stg
Storage Temperature
8.5
A
12.5
W
115
℃
-65~115 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.6 ℃/W
isc Website：www.iscsemi.cn