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| BU105 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU105
DESCRIPTION
·High Voltage-VCER= 1500V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 2.5A
APPLICATIONS
·Designed for use in line operated B&W(19 and 20 inch 110â
deflection circuits ) or color ( 11 and 14 inch 90â deflection
circuits TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCER
Collector-Emitter Voltage RBE= 100Ω
1500
V
VCEO Collector-Emitter Voltage
750
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC= 90â
TJ
Junction Temperature
Tstg
Storage Temperature
2.5
A
10
W
115
â
-65~115 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 â/W
isc Websiteï¼www.iscsemi.cn
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