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| BU104 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU104
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@ IC= 7A
APPLICATIONS
·Designed for use in horizontal deflexion output stage of B/W
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage VBE= -5V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak Repetitive
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC= 25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
400
V
150
V
400
V
10
V
7
A
15
A
3
A
85
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.0 â/W
isc Websiteï¼www.iscsemi.cn
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