BTB06 Datasheet, PDF (1/1 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

isc Triacs
INCHANGE Semiconductor
BTB06 T/D/S/A
FEATURES
·With TO-220AB non insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. application on 4Q such as phase control and static switching.
·Minimum Lot-to-Lot variations for robust device performance and reliable
operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
IT(RMS) RMS on-state current (full sine wave)T_j=90℃
6
A
ITSM Non-repetitive peak on-state current t_p=10ms
60
A
Tj
Operating junction temperature
110
℃
Tstg Storage temperature
-45~150 ℃
Rth(j-c) Thermal resistance, junction to case
3.2 ℃/W
Rth(j-a) Thermal resistance, junction to ambient
60
℃/W
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT
400
600
700
V
400
600
700
V
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110℃
T
Ⅰ-Ⅱ-Ⅲ
IGT
Gate trigger current
VD=12V; RL= 33Ω
5
Ⅳ
5
IH
Holding current
IGT= 0.1A, Gate Open 15
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 8.5A
MAX
0.01
0.75
0.01
0.75
DS
5 10
10 10
15 25
1.5
1.65
UNIT
mA
mA
A
10 mA
25
25 mA
V
V
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