BTB04-600 Datasheet, PDF (1/1 Pages) Kersemi Electronic Co., Ltd. – SENSITIVE GATE TRIACS

isc Triacs
INCHANGE Semiconductor
BTB04-600
FEATURES
·With TO-220AB non insulated package
·Suitables for general purpose applications where gate
high sensitivity is required. Application on 4Q such as
phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)T_j=95℃
ITSM Non-repetitive peak on-state current t_p=10ms
Tj
Operating junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; RL= 30Ω
Ⅲ
Ⅳ
IH
Holding current
IGT= 0.1A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 5.5A ; tp= 380μs
MIN
600
600
4
40
110
-40~150
2.4
60
UNIT
V
V
A
A
℃
℃
℃/W
℃/W
MAX
0.01
0.75
0.01
0.75
10
UNIT
mA
mA
10
mA
10
25
25
mA
1.5
V
1.65 V
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