BTA41-600 Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Triacs

isc Triacs
INCHANGE Semiconductor
BTA41-600
FEATURES
·With TOP3 insulated package
·Suitables for general purpose where high surge current capability is required.
Application such as phase control and tatic switching on inductive or resistive load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM
IT(RMS)
Repetitive peak reverse voltage
RMS on-state current (full sine wave)Tj=80℃
ITSM Non-repetitive peak on-state current t_p=20ms
Tj
Operating junction temperature
Tstg
PG(AV)
Storage temperature
Average gate power dissipation(Tj=125℃)
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
UNIT
600
V
600
V
41
A
410
A
125
℃
-40~150 ℃
1
W
0.9 ℃/W
50
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; RL= 100Ω
Ⅲ
Ⅳ
IH
Holding current
IGT= 0.5A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 100Ω
VTM On-state voltage
ITM= 60A; tp= 380μs
MAX
0.005
5.0
0.005
5.0
50
UNIT
mA
mA
50
mA
50
100
80 mA
1.3
V
1.55 V
isc website： www.iscsemi.com
isc & iscsemi is registered trademark