BTA08-600BW Datasheet, PDF (1/1 Pages) STMicroelectronics – SN UBBERLESS TRIACS

INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTA08-600BW
FEATURES
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak reverse voltage
600
V
IT(RMS) RMS on-state current (full sine wave)T_j=105℃
8
A
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Non-repetitive peak on-state current tp=20ms
Operating junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
80
A
110
℃
-45~150 ℃
4.3 ℃/W
60
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; RL= 33Ω
Ⅲ
IH
Holding current
IGT= 0.1A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 33Ω
VTM On-state voltage
IT= 11A; tp= 380μs
MAX
0.01
0.5
0.01
0.5
50
UNIT
mA
mA
50 mA
50
50 mA
1.3
V
1.55 V
isc website：www.iscsemi.cn
isc&iscsemi is registered trademark