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| BTA06-600A Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – With TO-220AB insulated package | |||
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTA06-600A
FEATURES
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
600
V
Repetitive peak reverse voltage
600
V
RMS on-state current (full sine wave)Tj=105â
6
A
Non-repetitive peak on-state current tp=20ms
60
A
Operating junction temperature
110
â
Storage temperature
-45~150 â
Thermal resistance, junction to case
2.7 â/W
Thermal resistance, junction to ambient
60 â/W
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
â
VR=VRRM,
VR=VRRM, Tj=110â
VD=VDRM,
VD=VDRM, Tj=110â
IGT Gate trigger current
â
¡
VD=12V; RL= 30Ω
â
¢
â
£
IH
Holding current
IGT= 0.1A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 8.5A; tp= 380μs
isc websiteï¼www.iscsemi.cn
MAX
0.01
0.5
0.01
0.5
10
UNIT
mA
mA
10
mA
10
25
25 mA
1.3
V
1.65 V
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