BT169G Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Thyristors

isc Thyristors
INCHANGE Semiconductor
BT169G
FEATURES
·With TO-92 package
·Sensitive gate trigger current
·Low reverse and forward blocking current
·Low holding current
·For general purpose switching and phase control applications.
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(AV) Average on-state current
IT(RMS) RMS on-state current
PGM Peak gate power
PG(AV) Average gate power
ITSM Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg Storage temperature
MIN
600
600
0.5
0.8
2
0.1
8
125
-40~+ 150
UNIT
V
V
A
A
W
W
A
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
VDRM Repetitive peak off-state voltage ID=0.1mA
VRRM Repetitive peak reverse voltage ID=0.5mA
IRRM Repetitive peak reverse current VRRM=600V
IDRM Repetitive peak off-state current VDRM=600V
IGT
Gate trigger current
VD= 12V; IT= 10mA
VTM On-state voltage
IT=1A
IH
Holding current
IGT=0.5mA ,VD=12V
VGT Gate trigger voltage
VD= 12V; IT= 10mA
MIN MAX UNIT
600
V
600
V
10 μA
10 μA
200 μA
1.35 V
5 mA
0.8 V
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