BT152X Datasheet, PDF (1/1 Pages) NXP Semiconductors – Thyristors

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
BT152X
APPLICATIONS
·It is suitable to fit all modes of control found in applications
such as over voltage crowbar protection,motor control circuits
in power tools and kitchen aids,in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation circuits etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM/VR Repetitive peak off-state voltage
RM
-400R
-600R
-800R
IT(AV) Average on-stage current
IT(RMS) RMS on-state current
ITSM Surge non-repetitive on-state current
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
TP=10ms
over any 20 ms period
MIN
400
650
800
13
20
200
0.5
125
-40~150
UNIT
V
V
V
A
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VRM=VRRM,RGK= 220Ω,
Tj=25℃
Tj=125℃
Tj=25℃
IDRM
Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω _Tj=125℃
VTM On-state voltage
ITM= 40A
IGT
Gate-trigger current
VD = 12 V; IT = 0.1 A
VGT Gate-trigger voltage
VD = 12 V; IT = 0.1 A
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
5 μA
1 mA
5 μA
1 mA
1.75 V
32 mA
1.5 V
1.3 ℃/W
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