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| BT152 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Thyristors | |||
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INCHANGE Semiconductor
isc Thyristors
isc Product Specification
BT152
APPLICATIONS
·It is suitable to fit all modes of control found in applications
such as overvoltage crowbar protection,motor control circuits
in power tools and kitchen aids,in-rush current limiting circuits,
. capacitive discharge ignition, voltage regulation circuits etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
ITSM
PG(AV)
Tj
Tstg
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-stage current
RMS on-state current
Surge non-repetitive on-state current
Average gate power dissipation
Operating junction temperature
Storage temperature
MIN
600
TC=105â
TC=105â
TP=10ms
Tj=125â
600
8
12
110
1
-40~125
-40~150
UNIT
V
V
A
A
A
W
â
â
ELECTRICAL CHARACTERISTICS (TC=25â unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM
Repetitive peak reverse current
VRM=VRRM,RGK= 220Ω,
Tj=25â
Tj=125â
Tj=25â
IDRM
Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω Tj=25â
5 μA
2 mA
5 μA
2 mA
VTM On-state voltage
ITM= 24A
1.6 V
IGT Gate-trigger current
VD= 12V; RL=33â¦
2
15 mA
VGT Gate-trigger voltage
VD= 12V; RL=33â¦
1.3 V
IH
Holding current
IT= 0.5A; Gate Open
30 mA
Rth(j-c) Thermal resistance
Junction to case
1.3 â/W
isc websiteï¼www.iscsemi.cn
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