BT151S-500R Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Thyristors

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
BT151S-500R
APPLICATIONS
Mesa glass passivation technology； Multilayer metal electrode on the back； Have high blocking voltage
and high temperature stability
cleaner、Electric tools such as motor speed controller；
Solid state relay；
Heating controller (temperature)；
Other phase control circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
VRRM
IT(AV)
ITSM
PG(AV)
di/dt
I²t
IGM
Tj
Tstg
Repetitive peak off-state voltage
Repetitive peak reverse voltage
On-state current Tc=80℃
Surge non-repetitive on-state current
TP=10ms
Average gate power
Repetitive rate of rise of on-state
current after triggering Tj=125℃
I²t for fusing t = 10 ms
Peak gate current tp=20us ,Tj=125℃
Operating Junction temperature
Storage temperature
500
500
7.5
80
1
50
64
4
-40 ~+125
-40 ~+150
V
V
A
A
W
A/us
A²S
A
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX
VRR=500V, Tj=125℃
1
IRRM Repetitive peak reverse current
VRR=500V, Tj=25℃
5
VDR=500V, Tj=125℃
1
IDRM Repetitive peak off-state current
VDR=500V, Tj=25℃
5
VTM On-state voltage
ITM= 24A
1.5
IGT
Gate-trigger current
VD=12V; RL=100Ω
6
VGT
IH
IL
dv/dt
Rth(j-c)
Gate-trigger voltage
Holding current
Latching current
Critical rate of rise of off-state
voltage
Thermal resistance junction to
mounting base
VD=12V; RL=100Ω
IT=0.5A
IG=1.2IGT
VD=2/3VDRM Tj=125℃
in free air
1.5
30
60 100
500
1.75
UNIT
mA
uA
mA
uA
V
mA
V
mA
mA
V/us
℃/W
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