BT151F-800 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Thyristors

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
BT151F-800
DESCRIPTION
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·In a full package ,plastic envelope
APPLICATIONS
·BT151F series is intended for use in applications requiring high
Bidirectional blocking voltage capability and high thermal cycling
performance
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
800
V
VRRM Repetitive peak reverse voltage
800
V
IT(AV) On-state current Tc=80℃
5.7
ITSM
Surge non-repetitive on-state
current Tp=10ms
100
PG(AV) Average gate power
0.5
Repetitive rate of rise of on-state
di/dt current after triggering
50
Tj=125℃
I²t
I²t for fusing t = 10 ms
50
IGM
Peak gate current
tp=20us ,Tj=125℃
2
Tj
Operating Junction temperature
125
A
A
W
A/us
A²S
A
℃
Tstg
Storage temperature
-40 ~+150 ℃
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