BT151-800R Datasheet, PDF (1/1 Pages) NXP Semiconductors – SCR, 12 A, 15mA, 800 V, SOT78

isc Thyristors
INCHANGE Semiconductor
BT151-800R
APPLICATIONS
·It is suitable to fit all modes of control found in applications
such as overvoltage crowbar protection,motor control circuits
in power tools and kitchen aids,in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation circuits etc.
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-stage current
IT(RMS) RMS on-state current
ITSM Surge non-repetitive on-state current
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
TP=10ms
over any 20 ms period
MIN
800
800
7.5
12
100
0.5
110
-40~150
UNIT
V
V
A
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VRM=VRRM,RGK= 220Ω,
Tj=25℃
Tj=125℃
Tj=25℃
IDRM
Repetitive peak off-state current VDM=VDRM, ,RGK= 220Ω _Tj=125℃
VTM On-state voltage
ITM= 23A
IGT
Gate-trigger current
VD = 12 V; IT = 0.1 A
VGT Gate-trigger voltage
VD = 12 V; IT = 0.1 A
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
5 μA
0.5 mA
5 μA
0.5 mA
1.75 V
15 mA
1.5 V
1.3 ℃/W
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