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| BT151-600 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Silicon Controlled Rectifiers | |||
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Thyristors
BT151-600
INCHANGE
 Features
·With TO-220 package
·1cathode 2 anode 3 gate
·For use in applications requiring high bidirectional
blocking voltage capability and high thermal cycling
performance. Typical applications include motor
control, industrial and domestic lighting, heating and
static switching.
 QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN
VDRM Repetitive peak off-state voltage
600
VRRM Repetitive peak reverse voltage
600
IT(AV) Average on-state current
7.5
IT(RMS) RMS on-state current
12
ITSM Non-repetitive peak on-state current 100
PGM Peak gate power
5
PG(AV)
Tstg
Tj
Average gate power
Storage temperature
Operating junction temperature
0.5
-45ï½150
110
UNIT
V
V
A
A
A
W
W
â
â
TO-220
 LIMITING VALUES
Limiting values in accordance with the absolute maximum system(IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
VDRM
VRRM
IGT
VT
VGT
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Gate trigger current
On-state voltage
Gate trigger voltage
VD=12V; IT=0.1A
IT=23A
VD=12V ; IT=0.1A
600
600
15
1.75
1.5
UNIT
V
V
mA
V
V
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