BT138 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Triacs

isc Triacs
INCHANGE Semiconductor
BT138
FEATURES
·With TO-220 package
·Glass passivated triacs in a plastic envelope, Intended
for use in general purpose bidirectional switching and
phase control applications, where high sensitivity is
required in all our quadrants.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
MIN
800
800
12
95
5
0.5
125
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; IT= 0.1A, RL= 30Ω
Ⅲ
Ⅳ
VTM On-state voltage
IH
Holding current
VGT Gate trigger voltage
IT= 15A
IGT= 0.1A, VD= 12V
VD=12V; RL= 30Ω all quadrant
MIN MAX UNIT
0.02
0.5
mA
0.02
0.5
mA
30
30
mA
30
70
1.65 V
60 mA
1.5 V
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