BT137-800 Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Triacs

isc Triacs
INCHANGE Semiconductor
BT137-800
FEATURES
·With TO-220 package
·Glass passivated triacs in a plastic envelope, for use
in general purpose bidirectional switching and phase
control applications, which are intendedto be interfaced
directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
MIN
800
800
8
65
5
0.5
125
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
IGT
Gate trigger current
Ⅱ
VD=12V; IT= 0.1A, RL= 30Ω
Ⅲ
Ⅳ
VTM On-state voltage
IH
Holding current
VGT Gate trigger voltage
IT= 10A
IGT= 0.1A, VD= 12V
VD=12V; RL= 30Ω all quadrant
MIN MAX UNIT
0.02
0.5
mA
0.02
0.5
mA
35
35
mA
35
70
1.65 V
20 mA
1.5 V
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