BT136 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Triacs

isc Triacs
INCHANGE Semiconductor
BT136
FEATURES
·With TO-220 package
·Glass passivated triacs in a plastic envelope, for
use in applications requiring high bidirectional
transient and blocking voltage capability and high
thermal cycling performance.
Typical applications Include motor control,industrial
and domestic lighting, heating and static switching.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak off-state voltage
IT(RMS) RMS on-state current (full sine wave)
ITSM Non-repetitive peak on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
MIN
600
600
4
25
5
0.5
110
-45~150
UNIT
V
V
A
A
W
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=110℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=110℃
Ⅰ
IGT
Gate trigger current
Ⅱ
Ⅲ
VD=12V; IT= 0.1A, RL= 30Ω
Ⅳ
VTM On-state voltage
IT= 5A
IH
Holding current
VGT Gate trigger voltage
IGT= 0.1A, VD= 12V
VD=12V; RL= 30Ω all quadrant
MIN MAX UNIT
0.01
0.5
mA
0.01
0.5
mA
10
10
mA
10
25
1.7 V
15 mA
1.5 V
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