BT134 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Triacs

isc Triacs
INCHANGE Semiconductor
BT134
FEATURES
·With TO-126P package
·Designed for use in general purpose bidirectional switching and phase
control applications , which are intended to be interfaced directly to
microcontrollers , logic integrated circuits and other low power gate
trigger circuits.
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak off-state voltage
600
V
IT(RMS) RMS on-state current (full sine wave)
4
A
ITSM Non-repetitive peak on-state current
25
A
PGM Peak gate power dissipation
5
W
PG(AV)
Tj
Tstg
Average gate power dissipation
Operating junction temperature
Storage temperature
0.5
W
125
℃
-45~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,
VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,
VD=VDRM, Tj=125℃
Ⅰ
0.01
0.2
mA
0.01
0.2
mA
35
IGT
Gate trigger current
Ⅱ
VD=12V; IT= 0.1A
Ⅲ
35
mA
35
Ⅳ
70
VTM On-state voltage
IT= 5A
1.7
V
IH
Holding current
IGT= 0.1A, VD= 12V
10 mA
VGT Gate trigger voltage
VD=12V; IT= 0.1A
1.5
V
isc website：www.iscsemi.com
1
isc & iscsemi is registered trademark