BFS67 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFS67
DESCRIPTION
·Low Noise Figure
NF = 4.5 dB TYP. @V_CE = 5 V, I_C = 2 mA, f = 500 MHz
·High Current-Gain—Bandwidth Product
fT= 1 GHz TYP. @V_CE = 5 V, I_C = 2 mA, f = 500 MHz
APPLICATIONS
·For a wide range of RF applications such as: mixers and
oscillators in TV tuners and RF communications equipment.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
25
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
2.5
V
I_C
Collector Current-Continuous
25
mA
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
50
mA
0.3
W
150
℃
-65~150
℃
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