BFS540 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFS540
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @V_CE = 8 V, I_C = 10 mA, f = 900 MHz
·High Current-Gain—Bandwidth Product
fT= 9 GHz TYP. @V_CE = 8 V, I_C = 40 mA, f = 1 GHz
APPLICATIONS
·Designed for RF wideband amplifier applications such as
satellite TV systems and RF portable communication
equipment with signal frequencies up to 2 GHz.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
2.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
120
mA
0.5
W
175
℃
-65~150
℃
isc website：www.iscsemi.cn
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