BFR520 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR520
DESCRIPTION
·High Power Gain
·High Current Gain Bandwidth Product
·Low Noise Figure
APPLICATIONS
·Designed for RF frontend in wideband applications in the
GHz range,such as analog and digital cellular telephones,
cordless.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CES Collector-Emitter Voltage
15
V
V_EBO Emitter-Base Voltage
2.5
V
I_C
Collector Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
70
mA
0.3
W
175
℃
-65~150
℃
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