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| BFR106 Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR106
DESCRIPTION
·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz
·High Gain
︱S21e︱2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
100
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
mA
0.7
W
150
â
-65~150
â
isc websiteï¼www.iscsemi.cn
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