BDY90 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY90
DESCRIPTION
·High DC Current Gain-
: h_FE= 30-120@I_C= 5A
·Excellent Safe Operating Area
·High Current Capability
APPLICATIONS
·Designed for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
120
V
V_CEV Collector-Emitter Voltage V_BE= -1.5V
120
V
V_CEO Collector-Emitter Voltage
100
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C≤25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
2
A
60
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
2.5
UNIT
℃/W
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